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Purpose
Place

EB Lithography [JBX-8100FS]

電子ビーム描画装置 [JBX-8100FS]
Maker
JEOL
Model
JBX-8100FS
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2023
Usage
Lithography
Specification
Acceleration Voltage:200kV
Beam Current:5pA~200nA
Field Stitching Accuracy:<20nm
Overlay Accuracy:<20nm
Max Sample Size:Φ8 inch

EB描画、EBリソグラフィー、電子線描画、電子線リソグラフィー、EB露光、電子線露光、グレースケール露光

Comparison Chart

EB Lithography [ELS-F125]

電子ビーム描画装置 [ELS-F125]
Maker
Elionix
Model
ELS-F125
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2014
Usage
Lithography
Specification
Acceleration Voltage:125kV
Beam Current:100pA~5nA
Field Stitching Accuracy:<20nm
Overlay Accuracy:<25nm
Max Sample Size:Φ6 inch

EB描画、EBリソグラフィー、電子線描画、電子線リソグラフィー、EB露光、電子線露光、グレースケール露光、EB Lithography, E-Beam Lithography, Electron Beam Lithography, EB Exposure, E-Beam Exposure, Electron Beam Exposure, Grayscale Exposure

Comparison Chart

EB Lithography [ELS-BODEN100]

電子ビーム描画装置 [ELS-BODEN100]
Maker
Elionix
Model
ELS-BODEN100
Place
Namiki MANA Bldg.
Night Operation
〇
Year
2022
Usage
Lithography
Specification
Acceleration Voltage:100kV
Beam Current:100pA~20nA
Field Stitching Accuracy:<30nm
Overlay Accuracy:<35nm
Max Sample Size:Φ8 inch

EB描画、EBリソグラフィー、電子線描画、電子線リソグラフィー、EB露光、電子線露光、グレースケール露光、EB Lithography, E-Beam Lithography, Electron Beam Lithography, EB Exposure, E-Beam Exposure, Electron Beam Exposure, Grayscale Exposure,

Comparison Chart

Laser Lithography [DWL66+]

レーザー描画装置 [DWL66+]
Maker
Heidelberg Instruments
Model
DWL66+
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2021
Usage
Lithography
Specification
Lithography Method:Direct laser lithography
Light Source:375nm semiconductor laser
Resolution:0.3um (HiRes)
Positioning Accuracy:<0.5um
Overlay Accuracy:<0.5um
Max Sample Size:8 inch square

レーザーリソグラフィー、レーザー露光、半導体レーザー、グレースケール露光、Laser Lithography, Laser Exposure, Semiconductor Laser, Grayscale Exposure

Comparison Chart

Maskless Lithography [DL-1000]

マスクレス露光装置 [DL-1000]
Maker
Nanosystem Solutions
Model
DL-1000
Place
Namiki MANA Bldg.
Night Operation
〇
Year
---
Usage
Lithography
Specification
Lithography Method:DMD
Light Source:405nm semiconductor lase
Resolution:1um
Positioning Accuracy:<1um
Overlay Accuracy:<1um
Max Sample Size:4 inch square

レーザーリソグラフィー、レーザー露光、レーザー描画、半導体レーザー、Laser Lithography, Laser Exposure, Semiconductor Laser

Comparison Chart

Maskless Lithography [DL-1000/NC2P]

マスクレス露光装置 [DL-1000/NC2P]
Maker
Nanosystem Solutions
Model
DL-1000/NC2P
Place
Namiki MANA Bldg.
Night Operation
〇
Year
2014
Usage
Lithography
Specification
Lithography Method:DMD
Light Source:405nm semiconductor laser
Resolution:1um
Positioning Accuracy:<1um
Overlay Accuracy:<1um
Max Sample Size:8 inch square

レーザーリソグラフィー、レーザー露光、レーザー描画、半導体レーザー、Laser Lithography, Laser Exposure, Semiconductor Laser

Comparison Chart

Maskless Lithography [MLA150]

マスクレス露光装置 [MLA150]
Maker
Heidelberg Instruments
Model
MLA150
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2023
Usage
Lithography
Specification
Lithography Method:DMD
Light Source:375nm semiconductor laser
Resolution:1um
Positioning Accuracy:<±1um
Overlay Accuracy:<±1um
Max Sample Size:8 inch square

レーザーリソグラフィー、レーザー露光、レーザー描画、半導体レーザー、グレースケール露光、Laser Lithography, Laser Exposure, Semiconductor Laser, Grayscale Exposure

Comparison Chart

Mask Aligner [MA-6]

マスクアライナー [MA-6]
Maker
Suss MicroTec
Model
MA-6
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Lithography
Specification
Lithography Method:photo mask
Light Source:Hg lamp
Resolution:1um
Positioning Accuracy:<1um
Overlay Accuracy:<1um
Max Sample Size:Φ3 inch

コンタクトアライナー、コンタクトマスクアライナー、水銀ランプ、Contact Aligner, Contact Mask Aligner

Comparison Chart

H2O Plasma Cleaner [AQ-500 #1]

水蒸気プラズマ洗浄装置 [AQ-500 #1]
Maker
Samco
Model
AQ-500 #1
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2021
Usage
Cleaning
Specification
High Frequency Output:50-250W
Reactive Gas:H2O,O2
Max Sample Size:Φ8 inch

アクアプラズマ、O2プラズマ、アッシング、RIE、エッチング、アッシャー、エッチャー、基板クリーニング、Aqua Plasma, O2 Plasma, Ashing, RIE, Etching, Asher, Etcher, Substrate Cleaning

H2O Plasma Cleaner [AQ-500 #2]

水蒸気プラズマ洗浄装置 [AQ-500 #2]
Maker
Samco
Model
AQ-500 #2
Place
Namiki MANA Bldg.
Night Operation
×
Year
2023
Usage
Cleaning
Specification
High Frequency Output:50-250W
Reactive Gas:H2O,O2
Max Sample Size:Φ8 inch

アクアプラズマ、O2プラズマ、アッシング、RIE、エッチング、アッシャー、エッチャー、基板クリーニング、Aqua Plasma, O2 Plasma, Ashing, RIE, Etching, Asher, Etcher, Substrate Cleaning

UV Ozone Cleaner [UV-1]

UVオゾンクリーナー [UV-1]
Maker
Samco
Model
UV-1
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Cleaning
Specification
Light Source: UV lamp
Ozone Generator:Silent electric discharge
Stage Temperature:Room temp~300℃
Max Sample Size:Φ8 inch

基板クリーニング、Substrate Cleaning

Sputter [JSP-8000]

スパッタ装置 [JSP-8000]
Maker
ULVAC
Model
JSP-8000
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
---
Usage
Deposition
Specification
Power Source:DC x 2, RF x 1
Power Output:500W
Targets:Φ4 inch×4 sets
Process Gas:Ar，O2，N2
Max Sample Size:Φ6 inch
Substrate Heating:Max. 300℃ (settable)

スパッター、成膜、金属膜、酸化膜、酸化物、スパッタリング、Film Deposition, Metal Films, Oxide Films, Sputtering

Comparison Chart

Sputter [CFS-4EP-LL #2]

スパッタ装置 [CFS-4EP-LL #2]
Maker
Shibaura Mechatronics
Model
CFS-4EP-LL #2
Place
Namiki MANA Bldg.
Night Operation
〇
Year
---
Usage
Deposition
Specification
Power Source:DC×2, RF×1
Power Output:500W
Cathodes:Φ3 inch×4 sets
Process Gas:Ar, O2, N2
Max Sample Size:Φ6 inch
Substrate Heating:Max. 300℃ (settable)

スパッター、成膜、金属膜、酸化膜、酸化物、スパッタリング、Film Deposition, Metal Films, Oxide Films, Sputtering

Comparison Chart

Sputter [CFS-4EP-LL #3]

スパッタ装置 [CFS-4EP-LL #3]
Maker
Shibaura Mechatronics
Model
CFS-4EP-LL #3
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2019
Usage
Deposition
Specification
Power Source:DC x １, RF x ２
Power Output:500W
Cathodes:Φ3 inch×4 sets
Process Gas:Ar, O2, N2
Max Sample Size:Φ8 inch
Substrate Heating:N/A (water-cooling)

スパッター、成膜、金属膜、酸化膜、酸化物、スパッタリング、Film Deposition, Metal Films, Oxide Films, Sputtering

Comparison Chart

Sputter [CFS-4EP-LL #4]

スパッタ装置 [CFS-4EP-LL #4]
Maker
Shibaura Mechatronics
Model
CFS-4EP-LL
Place
Namiki MANA Bldg.
Night Operation
〇
Year
2023
Usage
Deposition
Specification
Power Source:DC×2, RF×1
Power Output:500W
Cathodes:Φ3 inch×4 sets
Process Gas:Ar, O2, N2
Max Sample Size:Φ8 inch
Substrate Heating:Max. 300℃ (settable)

スパッター、成膜、金属膜、酸化膜、酸化物、スパッタリング、Film Deposition, Metal Films, Oxide Films, Sputtering

Comparison Chart

EB Evaporator [RDEB-1206K]

電子銃型蒸着装置 [RDEB-1206K]
Maker
R-DEC
Model
RDEB-1206K
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Deposition
Specification
Acceleration Voltage:10kV
Max Emission:500mA
T-S Distance:500mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ6 inch
Materials:Ti, Au, Pd, Cu, Ag, Cr, SiO2, MgO, etc.

EB蒸着、EBデポ、金属膜、電子ビーム蒸着、EB Deposition, Metal Films, E-Beam Deposition, Electron Beam Deposition

Comparison Chart

EB Evaporator [ADS-E86]

電子銃型蒸着装置 [ADS-E86]
Maker
R-DEC
Model
ADS-E86
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2021
Usage
Deposition
Specification
Accelaration Voltage:6kV
Max Emission:500mA
T-S Distance:500mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ8 inch
Materials:Ti, Au-Ge, Al, Ni, Au, Pt

EB蒸着、EBデポ、金属膜、電子ビーム蒸着、EB Deposition, Metal Films, E-Beam Deposition, Electron Beam Deposition

Comparison Chart

EB Evaporator [MB-501010]

電子銃型蒸着装置 [MB-501010]
Maker
ULVAC
Model
MB-501010
Place
Namiki MANA Bldg.
Night Operation
×
Year
2019
Usage
Deposition
Specification
Acceleration Voltage:10kV
Max Emission:500mA
T-S Distance:700mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ6 inch
Materials:Ag, Pd, Au, Pt, Al, Ti, Cr, Ni, etc.

EB蒸着、EBデポ、金属膜、電子ビーム蒸着、EB Deposition, Metal Films, E-Beam Deposition, Electron Beam Deposition

Comparison Chart

EB Evaporator [ADS-E810]

電子銃型蒸着装置 [ADS-E810]
Maker
R-DEC
Model
ADS-E810
Place
Namiki MANA Bldg.
Night Operation
×
Year
2023
Usage
Deposition
Specification
Accelaration Voltage:6kV
Max Emission:500mA
T-S Distance:500mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ8 inch
Materials:Ti, Au-Ge, Al, Ni, Au, Pt, Pd, Ag, etc.

EB蒸着、EBデポ、金属膜、電子ビーム蒸着、EB Deposition, Metal Films, E-Beam Deposition, Electron Beam Deposition

Comparison Chart

ALD [SUNALE R-150]

原子層堆積装置 [SUNALE R-150]
Maker
Picosun
Model
SUNALE R-150
Place
Namiki MANA Bldg.
Night Operation
〇
Year
---
Usage
Deposition
Specification
Film-Deposition Method:Thermal or plasma
Sources:TMA(Al2O3), TDMAT(TiO2), TDMAS(SiO2), TDMAHf(HfO2), ZrCp(ZrO2)
Max Sample Size:Φ6 inch
Substrate Heating:Room temp~300℃ (settable)

ALD、Atomic Layer Deposition,

Comparison Chart

ALD [AD-230LP]

原子層堆積装置 [AD-230LP]
Maker
Samco
Model
AD-230LP
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2021
Usage
Deposition
Specification
Film-Deposition Method:Thermal or plasma
Sources:TMA(Al2O3, AlN), TDMAT(TiO2, TiN), BDEAS,(SiO2, SiN)
Max Sample Size:Φ8 inch
Substrate Heating:Room temp~500℃ (settable)

ALD、Atomic Layer Deposition,

Comparison Chart

SiO2 PECVD [PD-220NL]

SiO2プラズマCVD装置 [PD-220NL]
Maker
Samco
Model
PD-220NL
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2022
Usage
Deposition
Specification
Film-Deposition Method: 2-frequency plasma CVD
Sources:TEOS (SiO2)
Max Sample Size:Φ8 inch
Substrate Heating:<100℃～400℃

応力制御、Stress Control,

Comparison Chart

SiN PECVD [PD-220NL]

SiNプラズマCVD装置 [PD-220NL]
Maker
Samco
Model
PD-220NL
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Deposition
Specification
Film-Deposition Method:Plasma CVD
Sources:SN-2 (SiN)
Max Sample Size:Φ8 inch
Substrate Heating:200℃ (default)

Comparison Chart

Auto LiFt-OFF [KLO-150CBU]

リフトオフ装置 [KLO-150CBU]
Maker
Kanamex
Model
KLO-150CBU
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2016
Usage
Deposition
Specification
Photoresist Swelling:80℃ NMP solution
Photoresist Removal:High-pressure jet NMP solution
Rinsing:IPA, pure water
Drying:Spin-dry, N2 blow
Max Sample Size:Φ6 inch

CCP-RIE [RIE-200NL]

CCP-RIE装置 [RIE-200NL]
Maker
Samco
Model
RIE-200NL
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Etching
Specification
Plasma Excitation Method:Parallel plate
Power Output:300W
Process Gas:CHF3, CF4, SF6, Ar, O2, N2
Sample Stage Temp:Room temp
Max Sample Size:Φ8 inch

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Reactive Ion Etching, Plasma Etching,

Comparison Chart

ICP-RIE [RIE-101iPH]

ICP-RIE装置 [RIE-101iPH]
Maker
Samco
Model
RIE-101iPH
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Etching
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 1kW
Bias Output:Max 300W
Process Gas:Cl2, BCl3, Ar, O2, N2
Sample Stage Temp:-20℃~room temp
Max Sample Size:Φ4 inch

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Chlorine Gas, Reactive Ion Etching, Plasma Etching,

Comparison Chart

ICP-RIE [RV-APS-SE]

ICP-RIE装置 [RV-APS-SE]
Maker
Sumitomo Precision
Model
RV-APS-SE
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Etching
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 3kW
Bias Output:Max 1kW
Process Gas:CHF3, CF4, C4F8, SF6, Ar, O2, He
Sample Stage Temp:-10~+40℃
Max Sample Size:Φ6 inch
Other: End point detector equipped

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Reactive Ion Etching, Plasma Etching,

Comparison Chart

ICP-RIE [CE300I]

ICP-RIE装置 [CE300I]
Maker
ULVAC
Model
CE300I
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Etching
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 1kW
Bias Output:Max 300W
Process Gas:Ar, O2, SF6, Cl2, BCl3, CF4, CHF3
Sample Stage Temp:Room temp
Max Sample Size:Φ6 inch

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Chlorine Gas, Reactive Ion Etching, Plasma Etching,

Comparison Chart

Si Deep RIE [ASE-SRE]

シリコンDRIE装置 [ASE-SRE]
Maker
Sumitomo Precision
Model
ASE-SRE
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Etching
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 1kW
Bias Output:Max 100W
Process Gas:SF6，C4F8，Ar，O2
Sample Stage Temp:Room temp
Max Sample Size:Φ6 inch
Other: Bosch process available

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Reactive Ion Etching, Plasma Etching,

Comparison Chart

ALE [PlasmaPro 100 ALE]

原子層エッチング装置 [PlasmaPro 100 ALE]
Maker
Oxford Instruments
Model
PlasmaPro 100 ALE
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2020
Usage
Etching
Specification
Plasma Excitation Method:Inductive
ICP Output:Max 3kW
Bias Output:Max 300W
Process Gas:Cl2，BCl3，SF6，Ar，N2，O2
Sample Stage Temp:-30~+80℃
Max Sample Size:Φ6 inch
Other: End point detector equipped

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Chlorine Gas, Reactive Ion Etching, Plasma Etching,

Comparison Chart

ICP-RIE [Spica #1]

低ダメージ精密エッチング装置 [Spica #1]
Maker
Sumitomo Precision
Model
APX-Spica
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2023
Usage
Etching
Specification
Plasma Excitation Method: Inductive coupling
ICP Output: Max 1kW
Bias Output: Max 300W
Process Gas: CHF3, CF4, C4F8, SF6, Ar，N2，O2
Sample Stage Temp: +10~+30℃
Max Sample Size: 6 inch
Other: End point detector equipped

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Chlorine Gas, Reactive Ion Etching, Plasma Etching,

Comparison Chart

ICP-RIE [Spica #2]

低ダメージ精密エッチング装置 [Spica #2]
Maker
Sumitomo Precision
Model
APX-Spica
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2023
Usage
Etching
Specification
Plasma Excitation Method: Inductive coupling
ICP Output: Max 1kW
Bias Output: Max 300W
Process Gas: Cl2, SiCl4, SF6, Ar，N2，O2
Sample Stage Temp: +10~+30℃
Max Sample Size: 6 inch
Other: End point detector equipped

エッチャー、ドライエッチング、反応性イオンエッチング、プラズマエッチング、Etcher, Dry Etching, Chlorine Gas, Reactive Ion Etching, Plasma Etching,

Comparison Chart

RTA [RTP-6 #1]

赤外線ランプ加熱装置 [RTP-6 #1]
Maker
ADVANCE RIKO
Model
RTP-6 #1
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Annealing
Specification
Heating Method:Upper side heating by infrared lamp
Process Temp:Room temp~1000℃
Heating Rate:<10℃/sec
Process Gas:N2, O2, Ar+H2(3%)
Max Sample Size:Φ6 inch

RTA、Rapid Thermal Annealer,

Comparison Chart

RTA [RTP-6 #2]

赤外線ランプ加熱装置 [RTP-6 #2]
Maker
ADVANCE RIKO
Model
RTP-6 #2
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2021
Usage
Annealing
Specification
Heating Method:Upper side heating by infrared lamp
Process Temp:<1100℃
Heating Rate:<10℃/sec
Process Gas:Ar, N2, Ar+H2(3%)
Max Sample Size:Φ6 inch

RTA、Rapid Thermal Annealer,

Comparison Chart

RTA [RTP-6 #3]

赤外線ランプ加熱装置 [RTP-6 #3]
Maker
ADVANCE RIKO
Model
RTP-6 #3
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2022
Usage
Annealing
Specification
Heating Method:Upper side heating by infrared lamp
Process Temp:<1100℃
eating Rate:<10℃/sec
Process Gas:N2, Ar+H2(3%), O2
Max Sample Size:Φ6 inch

RTA、Rapid Thermal Annealer,

Comparison Chart

FE-SEM [S-4800]

FE-SEM [S-4800]
Maker
Hitachi Hightec
Model
S-4800
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Observation
Specification
Acceleration Voltage:0.5～30kV
Retarding:0.1～2kV
Magnification:20～800K
Resolution:1.0 nm (15 kV), 1.4 nm (1 kV)
Detector:SE
Max Sample Size:Φ6 inch

電子顕微鏡、Scanning Electron Microscope

Comparison Chart

FE-SEM+EDX [S-4800]

FE-SEM+EDX [S-4800]
Maker
Hitachi Hightec
Model
S-4800
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Observation
Specification
Acceleration Voltage:0.5～30kV
Retarding:0.1～2kV
Magnification:20～800K
Resolution:1.0 nm (15 kV) , 1.4 nm (1 kV)
Detector:SE, BSE
Max Sample Size:Φ6 inch
EDX:HORIBA X-MAX80

電子顕微鏡、EDS、組成分析、マッピング、Scanning Electron Microscope, EDS, Composition Analysis, Mapping

Comparison Chart

FE-SEM+EDX [SU8000]

FE-SEM+EDX [SU8000]
Maker
Hitachi Hightec
Model
SU8000
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Observation
Specification
Acceleration Voltage:0.5～30kV
Retarding:0.1～2kV
Magnification:20～800K
Resolution:1.0 nm (15 kV) , 1.3 nm (1 kV)
Detector:SE, BSE
Max Sample Size:Φ4 inch
EDX:Bruker FQ5060

電子顕微鏡、EDS、組成分析、マッピング、Scanning Electron Microscope, EDS, Composition Analysis, Mapping

Comparison Chart

FE-SEM+EDX [SU8230]

FE-SEM+EDX [SU8230]
Maker
Hitachi Hightec
Model
SU8230
Place
Namiki MANA Bldg.
Night Operation
×
Year
2014
Usage
Observation
Specification
Acceleration Voltage:0.5～30kV
Retarding:0.01～2kV
Magnification:20～1,000K
Resolution:0.8 nm (15 kV) , 1.1 nm (1 kV)
Detector:SE, BSE
Max Sample Size:Φ6 inch
EDX:HORIBA X-MAX80

電子顕微鏡、EDS、組成分析、マッピング、Scanning Electron Microscope, EDS, Composition Analysis, Mapping

Comparison Chart

Tabletop SEM+EDX [TM3000]

卓上電子顕微鏡 [TM3000]
Maker
Hitachi Hightec
Model
TM3000
Place
Namiki MANA Bldg.
Night Operation
×
Year
2013
Usage
Observation
Specification
Acceleration Voltage:5／15 kV
Retarding: -
Magnification:15～10K
Resolution:
Detector:BSE
Max Sample Size:70mm
EDX:Bruker Xflash MIN

電子顕微鏡、EDS、組成分析、マッピング、Scanning Electron Microscope, EDS, Composition Analysis, Mapping

Comparison Chart

SPM [Jupiter XR]

走査型プローブ顕微鏡 [Jupiter XR]
Maker
Oxford Instruments
Model
Jupiter XR
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2021
Usage
Observation
Specification
Measurement Mode:Shape/mechanical/electric/magnetic measurement, etc.
Scanning Range:90um x 90um
Stage Motion Range:200mm square
Max Sample Size:Φ8 inch

AFM、SPM、AMF, Atomic Force Microscope, Scanning Probe Microscope

SPM [L-trace]

走査型プローブ顕微鏡 [L-trace]
Maker
Hitachi Hightec
Model
L-trace
Place
Namiki MANA Bldg.
Night Operation
〇
Year
---
Usage
Observation
Specification
Measurement Mode:contact/tapping AFM, friction force microscope measurement, etc.
Scanning Range:90um x 90um
Max Sample Size:Φ6 inch

AFM、SPM、AMF, Atomic Force Microscope, Scanning Probe Microscope

SPM [Nanoscope5]

走査型プローブ顕微鏡 [Nanoscope5]
Maker
Bruker
Model
Nanoscope5
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Observation
Specification
Measurement Mode:Contact AFM, tapping AFM, MFM, electrochemistry STM, liquid phase AFM
Scanning Range:16um x 16um
Stage Motion Range:3mm x 3mm
Max Sample Size:<Φ12mm

AFM、SPM、AMF, Atomic Force Microscope, Scanning Probe Microscope

Laser Microscope [LEXT OLS4000]

レーザー顕微鏡 [LEXT OLS4000]
Maker
OLYMPUS
Model
LEXT OLS4000
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Observation
Specification
Light Source:405nm semiconductor laser
Resolution:XY:0.12um/Z:0.01um
Observation Mode:Laser observation, bright field, differential interference observation
Max Sample Size:100mm square

Laser Microscope [VK-9700]

レーザー顕微鏡 [VK-9700]
Maker
KEYENCE
Model
VK-9700
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Observation
Specification
Light Source408nm semiconductorlaser
Resolution:
Observation Mode:Laser observation, bright field
Max Sample Size:Φ100mm

カラーレーザー、Color Laser,

Surface Profilometer [Dektak XT-A]

触針式プロファイラー [Dektak XT-A]
Maker
Bruker
Model
Dektak XT-A
Place
Sengen Materials Reliability Bldg.
Night Operation
〇
Year
2021
Usage
Measurement
Specification
Resolution:1Å（6.5um range）
Scanning Distance:55mm
Contact Pressure Range:0.03-15mg
Max Sample Size:Φ8 inch
Other:Automatic stage 3D mapping

デクタク、段差計、マッピング、Dektak, Surface Profiler, Surface Shape Measurement, Surface Roughness Measurement, Mapping

Surface Profilometer [Dektak 6M]

触針式プロファイラー [Dektak 6M]
Maker
Bruker
Model
Dektak 6M
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Vertical Resolution:0.1nm
Vertical Scanning Distance:Max 262µm
Measurement Distance:50 µm~30 mm
Max Sample Size:Φ6 inch

デクタク、段差計、Dektak, Surface Profiler, Surface Shape Measurement, Surface Roughness Measurement,

Ellipsometer [MARY-102FM]

エリプソメーター [MARY-102FM]
Maker
Five Lab
Model
MARY-102FM
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Light Source:632nm He-Ne laser
Beam Aperture:0.8mm
Incidence Angle:50°, 60°, 70°
Max Sample Size:Φ4 inch
Other:Automatic mapping

薄膜測定、Thin Film Measurement, Film Thickness Measurement,

Spectroscopic Ellipsometer [M2000]

分光エリプソメーター [M2000]
Maker
J.A.Woollam
Model
M2000
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Light Source:Deuterium halogen lamp
Spectroscopic Range:250~1000nm
Incidence Angle:45°~90°
Max Sample Size:Φ6 inch

薄膜測定、Thin Film Measurement, Film Thickness Measurement, Spectroscopy

Spectroscopic Ellipsometer [UNECS-2000A]

分光エリプソメーター [UNECS-2000A]
Maker
ULVAC
Model
UNECS-2000A
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2023
Usage
Measurement
Specification
Light Source:Deuterium halogen lamp
Spectroscopic Range:530~750nm
Incidence Angle:70°
Max Sample Size:Φ8 inch

膜厚測定、屈折率測定、薄膜、マッピング、thickness, Profile, refractive index, mapping

Comparison Chart

Optical Film Mapper [F54-XY-200-UV]

顕微分光膜厚計 [F54-XY-200-UV]
Maker
Filmetrics
Model
F54-XY-200-UV
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2020
Usage
Measurement
Specification
Light Source:Deuterium halogen lamp
Wavelength:190~1100nm
Spot Aperture:<10um
Measurable Film Thickness:5nm~30um
Max Sample Size:Φ6 inch

Thin-Film Stress Tester [FLX-2000-A]

薄膜応力測定装置 [FLX-2000-A]
Maker
TOHO TECHNOLOGY
Model
FLX-2000-A
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2018
Usage
Measurement
Specification
Measurement Method:Laser scan
Measurement Range:1~4000MPa
Measurement Reproducibility:1.3MPa (1σ)
Sample Size:Φ3, 6 or 8 inch
Other:3D mapping function

Room Temp. Prober [MX-200/B]

室温プローバー [MX-200/B]
Maker
Vector Semicon
Model
MX-200/B
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Probe:Coaxial probe
Manipulator:4
I-V Measurement Terminal:4 unit
C-V Measurement Terminal:1 unit
Max Sample Size:Φ4 inch
Other:Voltage applicable stage

Room Temp. Prober [HMP-400]

室温プローバー [HMP-400]
Maker
HiSOL
Model
HMP-400
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Probe:Coaxial probe
Manipulator:4
I-V Measurement Terminal:4 units
C-V Measurement Terminal:1 units
Max Sample Size:Φ4 inch
Other:Stage heating function

電気特性、IV、CV、Electrical Properties Measurement, Electrical Characteristic Measurement

Low Temp. Prober [GRAIL-408-32-B]

低温プローバー [GRAIL-408-32-B]
Maker
NTE
Model
GRAIL-408-32-B
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Sample Cooling Method:No refrigerant
Probe:Coaxial probe
Manipulator:4
I-V Measurement Terminal:4 unit
Max Sample Size:Φ4 inch
Temperature: 8K~300K (changeable)

電気特性、IV、CV、Electrical Properties Measurement, Electrical Characteristic Measurement

Liquid N2 Prober [SB-LN2]

液体窒素プローバー [SB-LN2]
Maker
Thermal Block
Model
SB-LN2
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Sample Cooling Method: Liquid nitrogen
Probe:SMA probe
Manipulator:4
I-V Measurement Terminal:4 unit
Max Sample Size:20mm square
Temperature:77K~500K (changeable)

電気特性、IV、CV、Electrical Properties Measurement, Electrical Characteristic Measurement

Wire Bonder [7476D #1]

ワイヤーボンダー [7476D #1]
Maker
West Bond
Model
7476D #1
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Bonding Method:Ultra sonic/ thermocompression wedge bond
Bonding Wedge:45°, 90°
Wire Material:Gold, aluminium
Work Holder Temperature:<300℃
Max Sample Size:50mm square

ウェッジボンダー、Au、Al、Wedge Bonder

Wire Bonder [7476D #2]

ワイヤーボンダー [7476D #2]
Maker
West Bond
Model
7476D #2
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
---
Usage
Measurement
Specification
Bonding Method:Ultra sonic/ thermocompression wedge bond
Bonding Wedge:45°, 90°
Wire Material:Gold, aluminum
Work Holder Temperature:<300℃
Max Sample Size:50mm square

ェッジボンダー、Au、Al、Wedge Bonder

Dicing Saw [DAD322]

ダイシングソー [DAD322]
Maker
DISCO
Model
DAD322
Place
Sengen Materials Reliability Bldg.
Night Operation
×
Year
2018
Usage
Dicing
Specification
Dicing Blade:Diamond blade
Dicing Range:XY:<162mm
Max Sample Size:Φ6 inch

切断、基板カット、チップ化、Substrate Cutting, Chips

Dicing Saw [DAD3220]

ダイシングソー [DAD3220]
Maker
DISCO
Model
DAD3220
Place
Namiki MANA Bldg.
Night Operation
×
Year
---
Usage
Dicing
Specification
Dicing Blade:Diamond blade
Dicing Range:XY:<162mm
Max Sample Size:Φ6 inch

切断、基板カット、チップ化、Substrate Cutting, Chips